IRFI1310N डाटा शीट PDF( Datasheet )

PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRFI1310N HEXFET® Po

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFI1310N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses

 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFET

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from Intern