DataSheet.in

IRFI1310N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A) - International Rectifier

भाग संख्या IRFI1310N
समारोह Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI1310N?> डेटा पत्रक पीडीएफ

IRFI1310N pdf
IRFI1310N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
C Drain to Sink Capacitance
Min.
100
–––
–––
2.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– ––– V
0.11 ––– V/°C
––– 0.036
––– 4.0 V
––– ––– S
––– 25 µA
––– 250
––– 100
nA
––– -100
––– 120
––– 15 nC
––– 58
11 –––
56 –––
ns
45 –––
40 –––
4.5 –––
7.5 –––
nH
1900 –––
450 –––
230 –––
12 –––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 13A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 22A†
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 22A
VDS = 80V
VGS = 10V, See Fig. 6 and 13 „†
VDD = 50V
ID = 22A
RG = 3.6
RD = 2.9Ω, See Fig. 10 „†
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 140
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 13A, VGS = 0V „
––– 180 270 ns TJ = 25°C, IF = 22A
––– 1.2 1.8 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF1310N data and test conditions

विन्यास 8 पेज
डाउनलोड[ IRFI1310N Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI1310GPower MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)International Rectifier
International Rectifier
IRFI1310NPower MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)International Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English