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IRFI1310NPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI1310NPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFI1310NPBF pdf
IRFI1310NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
C Drain to Sink Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA†
––– ––– 0.036 VGS = 10V, ID = 13A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
14 ––– ––– S VDS = 25V, ID = 22A†
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 120
ID = 22A
––– ––– 15 nC VDS = 80V
––– ––– 58
––– 11 –––
VGS = 10V, See Fig. 6 and 13 „†
VDD = 50V
–––
–––
56 –––
45 –––
ns
ID = 22A
RG = 3.6
––– 40 –––
RD = 2.9Ω, See Fig. 10 „†
––– 4.5 –––
Between lead,
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
D
S
––– 1900 –––
VGS = 0V
––– 450 ––– pF VDS = 25V
––– 230 –––
ƒ = 1.0MHz, See Fig. 5†
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 140
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 180 270
V TJ = 25°C, IS = 13A, VGS = 0V „
ns TJ = 25°C, IF = 22A
––– 1.2 1.8 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF1310N data and test conditions

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