IRFI640 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRFI640 | 200V N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
 Fairchild Semiconductor |
|
| IRFI640A | Power MOSFET Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Ma |
Fairchild Semiconductor |
|
| IRFI640B | 200V N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
| IRFI640B | N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
| IRFI640G | Power MOSFET |
 International Rectifier |
|
| IRFI640G | Power MOSFET Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Cha |
 Vishay |
|
| IRFI640GPbF | Power MOSFET Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Cha |
Vishay |
शेयर लिंक :
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