DataSheet.in

IRFI640A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Fairchild Semiconductor

भाग संख्या IRFI640A
समारोह Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI640A?> डेटा पत्रक पीडीएफ

IRFI640A pdf
IRFW/I640A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.26 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250µA
V/oC ID=250µA See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=200V
µA VDS=160V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 0.18 VGS=10V,ID=9A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 9.61 -- VDS=40V,ID=9A
O4
-- 1160 1500
-- 210 250 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 94 110
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 17 40
-- 16 40
VDD=100V,ID=18A,
-- 48 110 ns RG=9.1
-- 24 60
See Fig 13
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 44 58
-- 10.4 --
-- 27.1 --
VDS=160V,VGS=10V,
nC
ID=18A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 18
-- 72
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25oC ,IS=18A,VGS=0V
-- 195 -- ns TJ=25oC ,IF=18A
-- 1.35 -- µC diF/dt=100A/µ s
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=1mH, IAS=18A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD <_ 18A, di/dt <_ 260A/ µs, VDD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250µ s, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature

विन्यास 7 पेज
डाउनलोड[ IRFI640A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI640200V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
IRFI640APower MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English