IRFF430 डाटा शीट PDF( Datasheet )

2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max

IRFF430 Data Sheet March 1999 File Number 1894.4 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD -90433C REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-P

~D~[F~ IRFF430,431 FIELD EFFECT POVVER TRANSISTOR 2.75 AMPERES 500, 450 VOLTS ROS(ON) =1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology