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IRFF430 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF430
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF430?> डेटा पत्रक पीडीएफ

IRFF430 pdf
IRFF430
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF430
500
500
2.75
11
±20
25
0.2
300
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
BVDSS
VGS(TH)
IDSS
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
On-State Drain Current (Note 2)
Gate to Source Leakage Current
ID(ON)
IGSS
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
VGS = 10V, ID = 1.5A (Figures 8, 9)
VDS 10V, ID = 2.7A (Figure 12)
ID 2.75A, RG = 9.1, VDD = 225V, RL = 80,
VGS = 10V (Figures 17, 18), MOSFET Switching Times
are Essentially Independent of Operating Temperature
VGS = 10V, ID 2.75A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is
Essentially Independent of Operating Temperature
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
CISS
COSS
CRSS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
Internal Drain Inductance
Internal Source Inductance
LD Measured from the Drain Modified MOSFET
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS Measured from the Source Inductances
Lead, 5mm (0.2in) from
D
Header and Source
Bonding Pad
LD
G
LS
S
MIN
500
2.0
-
-
2.75
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--
V
- 4.0
V
- 25 µA
- 250 µA
--
A
- ±100 nA
1.3 1.500
3.0 -
S
- 30 ns
- 30 ns
- 55 ns
- 30 ns
22 30
nC
11 -
11 -
600 -
100 -
30 -
5.0 -
nC
nC
pF
pF
pF
nH
15 -
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air 0peration
- - 5.0 oC/W
- - 175 oC/W
2

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