IRFF210 डाटा शीट PDF( Datasheet )

IRFF210 Data Sheet March 1999 File Number 1887.3 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD-90424D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF210 200V 1.5Ω ID 2.25A IRFF210 JANTX2N6784 JANTXV2N6784 REF:M

~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to