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IRFF210 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF210
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF210?> डेटा पत्रक पीडीएफ

IRFF210 pdf
=electrical characteristics (Tc 250 C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFF210 BVDSS
IRFF211
200
150
--
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
-
-
-
-
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
-
-
MAX
UNIT
-
-
250
1000
±100
Volts
pA
nA
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 IJ.A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.25A)
Forward Transconductance
(VOS = 10V, 10 = 1.25A)
Tc = 25°C VGS(TH)
10(ON)
ROS(ON)
9fs
2.0
2.2
-
.72
-
-
-
-
4.0 Volts
-A
1.5 Ohms
- mhos
dynamic characteristics
Input Capacitance
VGS =OV
Output Capacitance
VOS= 25V
Reverse Transfer Capacitance
f = 1 MHz
Ciss
Coss
Crss
-
-
-
- 150 pF
- 80 pF
- 25 pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 90V
10 = 1.25A, VGS = 15V
RGEN = 500, RGS = 12.50
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
-
-
-
-
8-
15 -
10 -
8-
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is - - 2.2 A
Pulsed Source Current
ISM - - 9.0 A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 2.SA)
Reverse Recovery Time
(IS =2.2A, dls/dt = 100A/psec, Tc =125°C)
VSO -
trr -
ORR
-
- 2.0 Volts
290 -
2.0 -
ns
pC
'Pulse Test: Pulse width:::; 300/.ls, duty cycle ~ 2%
50
40
20
!'
'0
8
15 6
l4
:'--"......",'"i 2
,-" i ' ,BIaI:::
1.0
/'
,/
I........
I(
.....:--......
..... 10"s
['.. .... l00.s
~
!Z 0.8
0.6
.. 0.4
9
0.2
r ;TC=25'C
J = 150'C MAX.
RlhJC = 8.33 KIW
r !")SINGLE PULSE 1
O.1 ""':OPERATION IN THIS AREA
I_IS liMITED RiSI
'" "-
1 ms
r-...
i'~ I'. 10ms
i'~ i' lOOms
:=~~~:~:::;; ~DC
0.05
1
4 6 8 10
20
40 60 80 100 200
400 600
VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2.4 I I ·1 I I I I
2.2 I--
CONDITIONS:
r-- ROS(ON) CONDITIONS: 10 = 1.25 A. VGS = 10V
2.0 VGS(TH) CONDITIONS: 10 = 250.A. VOS = VGS
o
V
,/
~ 1.B
::;
V ROSIONI
<~r 1.6
,/
~ 1.4
~ 1.2
-"~ 1.0
-z
-:.. 0.8
--- - - --8oz
0.6
,,/
I---
./
/'
V :--
r-VGSITHI -
a:
0.4
0.2
o
-40
o 40 80
TJ • JUNCTION TEMPERATURE ('C)
120
160
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
270

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डाउनलोड[ IRFF210 Datasheet.PDF ]


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