AOD4120 डाटा शीट PDF( Datasheet )

AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable f

isc N-Channel MOSFET Transistor AOD4120 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =18mΩ(Max) ·100% avalanche tested