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AOD4120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOD4120
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOD4120?> डेटा पत्रक पीडीएफ

AOD4120 pdf
AOD4120
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
1
5
uA
IGSS Gate-Body leakage current
VDS=0V, VGS=±16V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6 1.26
2
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
A
VGS=10V, ID=20A
14 18
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
TJ=125°C
21
20
25 m
VGS=2.5V, ID=4A
57 75
gFS Forward Transconductance
VDS=5V, ID=20A
19 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current G
0.77 1
30
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900
162
105
1.8 2.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=0.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
9.5
18
9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of
T A =25°C. The
R θJA is measured
Power dissipation
with the device mounted on 1in 2 FR-4 board with
P DSM is based on R θJA and the maximum allowed
2oz. Copper, in a still air environment with
junction temperature 0of 150°C. The value in
any
given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.

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