DataSheet.in

IRF614S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF614S
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF614S?> डेटा पत्रक पीडीएफ

IRF614S pdf
IRF614S, SiHF614S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.6 Ab
VDS = 50 V, ID = 1.6 Ab
250 -
-V
- 0.39 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 2.0
0.90 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.7 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 2.7 A,
Rg = 24 , RD = 45 , see fig. 10b
-
-
-
-
-
-
-
-
-
-
140 -
42 - pF
9.6 -
- 8.2
- 1.8 nC
- 4.5
7.0 -
7.6 -
ns
16 -
7.0 -
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 2.7
A
- - 8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 190 390 ns
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μsb
Qrr
-
0.64 1.3
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91026
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

विन्यास 9 पेज
डाउनलोड[ IRF614S Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF614N-Channel Mosfet TransistorInchange Semiconductor
Inchange Semiconductor
IRF6142.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFETIntersil Corporation
Intersil Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English