डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF614S | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRF614S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
|
IRF614S | Power MOSFET Power MOSFET
IRF614S, SiHF614S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
D2PAK (TO-263)
D
2.0
GD S
G
S N-Ch |
Vishay |
|
IRF614SPBF | HEXFET Power MOSFET PD-95984
IRF614SPbF
Lead-Free
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1
12/21/04
IRF614SPbF
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2
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IRF614SPbF
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3
IRF614SPbF
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International Rectifier |
www.DataSheet.in | 2017 | संपर्क |