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AOT8N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 8A N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT8N60
समारोह 8A N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT8N60?> डेटा पत्रक पीडीएफ

AOT8N60 pdf
AOT8N60/AOTF8N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVsDhSeSet4u.cDomrain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4A
gFS Forward Transconductance
VDS=40V, ID=4A
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
V
0.65
V/ oC
1
10
µA
±100 nA
3 3.8 5
V
0.74 0.9
12.5 S
0.73 1
V
8A
32 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
912 1140 1370
87 109 131
6.2 7.8 9.5
3.1 3.9 5.9
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=8A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=300V, ID=8A,
tD(off)
Turn-Off DelayTime
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
28.4
5.8
13.4
30
63
69
51
270
3.3
35
7
17
40
75
85
65
324
4.0
nC
nC
nC
ns
ns
ns
ns
ns
µC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. L=60mH, IAS=3.2A, VDD=50V, RG=25, Starting TJ=25°C
Rev 0. July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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