AOT8N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT8N60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) ·100% avalanche teste

AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltag