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IRF620 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS - STMicroelectronics

भाग संख्या IRF620
समारोह N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=IRF620?> डेटा पत्रक पीडीएफ

IRF620 pdf
IRF620/FI
THERMAL DATA
Rthj-case
Rthj- amb
R th c-s
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1. 79
ISOWATT220
4. 17
6 2. 5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
6
20
5
4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
IG SS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VD S = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
VGS = ± 20 V
Tc = 125 oC
Min.
200
Typ.
Max.
Unit
V
10
100
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max VG S = 10 V
Min.
2
6
Typ.
3
0. 55
Max.
4
0.8
Unit
V
A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 3 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
1.5
Typ.
3.5
Max.
Unit
S
460 600
90 120
20 30
pF
pF
pF
2/9

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डाउनलोड[ IRF620 Datasheet.PDF ]


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