IRF620 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF620

IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOG

IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guara

www.DataSheet4U.com IRF620 Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A D G S N Channel Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Symbol Parameter Drain t

www.vishay.com IRF620 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Singl

PD - 97500A IRF6201PbF VDS RDS(on) max (@VGS = 4.5V) 20 2.45 2.75 130 27 V mΩ mΩ nC A 6 6 6 *     HEXFET® Power MOSFET     ' ' ' ' RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) SO-