डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD082N10N3 | Power-Transistor www.DataSheet.co.kr
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on |
Infineon |
|
IPD082N10N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD082N10N3G | Power-Transistor www.DataSheet.co.kr
IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low o |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |