ZXMN2B03E6 डाटा शीट PDF( Datasheet )

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0 Description Th

NEW PRODUCT ZXMN2B03E6 20V SOT26 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V Max RDS(ON) 0.040 @ VGS = 4.5V 0.055 @ VGS = 2.5V 0.075 @ VGS = 1.8V Max ID TA = +25C 5.4A 4.6A 4