डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VS3 | AC-DC / Configurable 1000 - 2500 Watts
VS Series
VS1-B2-H522-00 1100W total
Special Features
• Power factor correction • IEC 555-2 harmonic distortion compliance • CISPR 22, EN55022 Level B conducted / radiated EMI • EN610 |
Emerson |
|
VS3009DS | 30V/8A Dual N-Channel Advanced Power MOSFET Features
30V/8A
Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V
Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant
VS3009DS
30V/8A Dual N-Chann |
Vanguard Semiconductor |
|
VS30150AD | N-Channel Advanced Power MOSFET Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VS30150AD |
Vanguard Semiconductor |
|
VS3019AD | N-Channel Advanced Power MOSFET Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V
Low On-Resistance
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
VS3019AD
30V/19A N-Channel Advanced Pow |
Vanguard Semiconductor |
|
VS3038AO | N-Channel Advanced Power MOSFET Features
30V/8A
Ron(typ.)=15 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V
Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant
VS3038AO
30V/8A N-Channel Ad |
Vanguard Semiconductor |
|
VS3060AD | 30V/60A N-Channel Advanced Power MOSFET VS3060AD
30V/60A N-Channel Advanced Power MOSFET
Features
♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant
Description
VS |
Vanguard Semiconductor |
|
VS3060AS | 30V/20A N-Channel Advanced Power MOSFET VS3060AS
30V/20A N-Channel Advanced Power MOSFET
Features
♦Low On-Resistance ♦Fast Switching ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦Green Product
Description
VS3060AS |
Vanguard Semiconductor |
www.DataSheet.in | 2017 | संपर्क |