डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VB60170G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60170G
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technol |
Vishay |
|
VB60170G-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB60170G
PIN 1
K
PIN 2
H |
Vishay |
www.DataSheet.in | 2017 | संपर्क |