डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VB60 | (VB Series) High Voltage Diffused Rectifiers www.DataSheet4U.com
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Micro Quality Semiconductor |
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VB60100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2 1
VB60100C
PIN 1
K
PIN 2
HEAT |
Vishay |
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VB60100C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-263AB K
2 1
FEATURES
• Trench MOS Schottky tech |
Vishay |
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VB60120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
V60120C, VB60120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.41 V at IF = 5 A
TO-220AB
TMBS ® D2PAK (TO-263AB)
K
3 2 1
V60120C
P |
Vishay |
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VB60170G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60170G
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technol |
Vishay |
|
VB60170G-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB60170G
PIN 1
K
PIN 2
H |
Vishay |
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