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VB40M120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product
VB40M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
• Trench MOS Schottky |
Vishay |
|
VB40M120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M |
Vishay |
|
VB40M120C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M |
Vishay |
|
VB40M120CHM3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M |
Vishay |
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