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TIP117 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVC |
KEC |
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TIP117 | PNP Epitaxial Silicon Darlington Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
% !"#
Features
• High DC Current Gain : hFE=1000 @ VCE=4.0V, |
MCC |
|
TIP117 | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeter |
RECTRON |
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TIP117 | PNP Transistor isc Silicon PNP Darlington Power Transistor
TIP117
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Satur |
INCHANGE |
|
TIP117 | PNP Epitaxial Silicon Darlington Transistor TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor
November 2014
TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt |
Fairchild Semiconductor |
|
TIP117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ®
TIP110/112 TIP115/117
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
s s
s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED AN |
STMicroelectronics |
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TIP117 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP110/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applicati |
Motorola |
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