TIP116 डाटा शीट PDF( Datasheet )

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : hFE=1000 @ VCE=4.0V,

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

General Purpose Transistor Description: A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications. Features: •  High DC Current G

isc Silicon PNP Darlington Power Transistor TIP116 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Satura

TIP115/TIP116/TIP117 — PNP Epitaxial Silicon Darlington Transistor TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors •

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applicati

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • H