TIM7785-8SL डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TIM7785-8SL | MICROWAVE POWER GaAs FET FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION
IM3= - |
 Toshiba |
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| TIM7785-8SL | MICROWAVE POWER GaAs FET | Toshiba |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |