डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1414-10LA | Microwave Power GaAs FET www.DataSheet4U.com
TOSHIBA
MICROWAVE POWER GaAs FET
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz |
Toshiba |
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TIM1414-10LA-252 | Microwave Power GaAs FET www.DataSheet4U.com
TOSHIBA
Oct. 1999
TIM1414-10LA-252
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Effi |
Toshiba |
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