डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIC206 | SILICON TRIACS TIC206 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997
q q q q q
Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage |
Power Innovations Limited |
|
TIC206A | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 m |
Comset Semiconductors |
|
TIC206B | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 m |
Comset Semiconductors |
|
TIC206D | Triacs isc Triacs
TIC206D
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
perform |
Inchange Semiconductor |
|
TIC206D | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 m |
Comset Semiconductors |
|
TIC206M | Triacs isc Triacs
TIC206M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
perform |
Inchange Semiconductor |
|
TIC206M | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR
• • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 m |
Comset Semiconductors |
www.DataSheet.in | 2017 | संपर्क |