डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58BYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM TC58BYG1S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically E |
Toshiba |
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TC58BYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM | Toshiba |
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TC58BYG1S3HBAI4 | 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |