डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SI2307 | P-Channel Enhancement Mode Field Effect Transistor Si2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) ( |
SiPU |
|
SI2307 | P-Channel Enhancement Mode Field Effect Transistor MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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SI2307
Features
• Halogen free available upon request b |
MCC |
|
SI2307 | -30V P-Channel Enhancement Mode MOSFET SI2307
-30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), [email protected], [email protected] < 87m Ω
Features Advanced trench process technology High Density Cell Design For |
PUOLOP |
|
SI2307CDS | P-Channel 30-V (D-S) MOSFET New Product
P-Channel 30-V (D-S) MOSFET
Si2307CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.088 at VGS = - 10 V 0.138 at VGS = - 4.5 V
TO-236 (SOT-23)
ID (A)a, b - 2.7 - 2.2
Qg (Typ.) |
Vishay |
|
SI2307DS | P-Channel MOSFET Si2307DS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V
ID (A)
–3 –2
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2307 |
Vishay Siliconix |
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