डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6012DPP | N-Channel Power MOSFET Preliminary Datasheet
RJK6012DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current H |
Renesas |
|
RJK6012DPP-A0 | High Speed Power Switching MOSFET RJK6012DPP-A0
600V - 10A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)
Low leakage current High speed switching |
Renesas |
www.DataSheet.in | 2017 | संपर्क |