डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6504 | (R650x / R651x) Microprocessors w
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Rockwell |
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R6504ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6504ENJ
FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max) ·100% avalanche te |
INCHANGE |
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R6504ENJ | Power MOSFET R6504ENJ
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lO |
ROHM |
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R6504ENX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6504ENX
FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max) ·100% avalanche te |
INCHANGE |
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R6504ENX | Power MOSFET R6504ENX
Nch 650V 4A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max.)
1.050Ω
ID
±4.0A
TO-220FM
PD
40W
lFeatures
1) Low on-resistance 2) Fast switc |
ROHM |
|
R6504KND3 | Nch 650V 4A Power MOSFET R6504KND3
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W
lFeatures
1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
l |
ROHM |
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R6504KNJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6504KNJ
FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max) ·100% avalanche te |
INCHANGE |
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