डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6009KNX | Power MOSFET R6009KNX
Nch 600V 9A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.535Ω
±9A 48W
lFeatures
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro |
ROHM |
|
R6009KNX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6009KNX
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 535mΩ(Max) ·100% avalanche test |
INCHANGE |
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