डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE63 | Silicon NPN Transistor High Gain / Low Noise Amp NTE63 Silicon NPN Transistor High Gain, Low Noise Amp
Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amp |
NTE Electronics |
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NTE630 | Silicon Rectifier Fast Recovery / Dual / Center Tap NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap
Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as |
NTE Electronics |
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NTE6354 | Silicon Power Rectifier Diode / 300 Amp NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp
Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to |
NTE Electronics |
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NTE6365 | Silicon Power Rectifier Diode / 300 Amp NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp
Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to |
NTE Electronics |
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NTE637 | Schottky Barrier Diode NTE637 Schottky Barrier Diode (Surface Mount)
Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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