NTE235 डाटा शीट PDF( Datasheet )

NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communic

NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type packag

NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Ma

NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V M

NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 1500V D On–Chip Damper Diode Absolute Maximum Ratings: (TA =

NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: D High–definition color display horizontal deflection output Features: D Fast speed: tf = 100ns Typ D High b

NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Appl