डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTD60 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o |
EDI |
|
NTD60N02R | Power MOSFET NTD60N02R
Power MOSFET
62 A, 25 V, N−Channel, DPAK
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Ga |
ON |
|
NTD60N03 | Power MOSFET NTD60N03
Power MOSFET 60 Amps, 28 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applicat |
ON Semiconductor |
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