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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE650 | Dolby B-Type Noise Reduction Circuit NE650
Dolby B-Type Noise Reduction Circuit
Product Specification
DESCRIPTION
The NE650 is a monolithic audio noise reduction circuit designed for use in Dolby™B-Type noise reduction systems. The NE650 is use |
Philips |
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NE6500379 | 3W L / S-BAND POWER GaAs MESFET DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset |
NEC |
|
NE6500379A | 3W L / S-BAND POWER GaAs MESFET DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset |
NEC |
|
NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET
GaAs MES FET
NE6500496
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power i |
NEC |
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NE6500496 | L&S BAND MEDIUM POWER GaAs MESFET L&S BAND MEDIUM POWER GaAs MESFET NE6500496
ABSOLUTE MAXIMUM RATINGS
(TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate |
California Eastern |
|
NE650103M | NECS 10 W L & S-BAND POWER GaAs MESFET NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET
FEATURES
• LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • HIGH OUTPUT POWER: 40 dBm TYP • HIGH POWER ADDED EFFI |
ETC |
|
NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET
GaAs MES FET
NE6501077
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power |
NEC |
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