डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE5511279A | 7.5 V UHF BAND RF POWER SILICON LD-MOS FET NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, • HIGH POWER ADDED E |
NEC |
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NE5511279A | 7.5V OPERATION SILICON RF POWER LD-MOS FET DISCONTINUED
SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused |
CEL |
www.DataSheet.in | 2017 | संपर्क |