डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTY3N60P | N-Channel MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY3N60P IXTA3N60P IXTP3N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C |
IXYS Corporation |
|
IXTY3N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTY3N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |