IXTU1R4N60P डाटा शीट PDF( Datasheet )

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25

isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot