डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ48N20T | Power MOSFET TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD MFCd Weight
Test |
IXYS |
|
IXTQ48N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 50mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |