IXTQ36N50P डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max) ·100% avalanche tested ·Minimu

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR