IXTQ30N60L2 डाटा शीट PDF( Datasheet )

Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-2

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va