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IXTQ23N60Q | Power MOSFETs Q-Class www.DataSheet4U.com
Power MOSFETs
Q-Class
IXTQ 23N60Q
VDSS ID25
RDS(on)
= = =
600 V 23 A 0.32 Ω
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
Preliminary Data |
IXYS Corporation |
|
IXTQ23N60Q | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 320mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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