डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ14N60P | PolarHV Power MOSFET PolarTM Power MOSFET
Enhancement Mode Avalanche Rated
IXTA14N60P IXTP14N60P IXTQ14N60P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C TJ = |
IXYS |
|
IXTQ14N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 550mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |