IXTP98N075T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP98N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot

Advance Technical Information TrenchMVTM Power MOSFET IXTA98N075T IXTP98N075T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 75 V 98 A 10 mΩ Symbol VDSS VDGR VGSM I D25 ILRMS IDM dv/dt IAR E AS Pd