डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP70N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP70N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
|
IXTP70N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA70N085T IXTP70N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = 85
ID25
RDS(on)
=
≤
70 13.5
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |