डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP60N10T | Power MOSFET TrenchTM Power MOSFET
IXTA60N10T IXTP60N10T
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD FC Md Weight
Test Conditions
TJ = 25C to 175C |
IXYS |
|
IXTP60N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP60N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |