डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP50N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP50N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 23mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot |
INCHANGE |
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IXTP50N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTP50N085T IXTY50N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 V 50 A 23 mΩ
TO-220 (IXTP)
GD S
D (TAB)
Symbol |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |