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IXTP180N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 180 5.5
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILR |
IXYS Corporation |
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IXTP180N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP180N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
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